By B. Jayant Baliga
"Advanced strength MOSFET innovations" presents an in-depth therapy of the physics of operation of complicated strength MOSFETs. Analytical versions for explaining the operation of the entire complicated strength MOSFETs are constructed and defined. the result of numerical simulations are supplied to provide extra perception into the gadget physics and validate the analytical versions. the result of two-dimensional simulations also are given, which will corroborate the analytical types and provides additional perception into the machine operation. This quantity additionally: -Discusses units that may have an important effect on enhancing the potency of the voltage-regulator-modules used to bring strength to microprocessors and pics chips in laptops and servers -Covers purposes in all decrease voltage circuits, in particular the car electronics region contains numerical simulation examples to provide an explanation for the working physics and validate the types - bargains wide insurance of the function of silicon carbide within the layout and constitution of energy rectifiers "Advanced strength MOSFET options" is a must-read for researchers and working towards engineers within the strength machine industry.
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Additional info for Advanced Power MOSFET Concepts
0 Â 1016/cm3. 228 mm. 178 mO cm2 based up on using the above parameters. In Model B, the JFET region is assumed to extend to the bottom the P-base region. 107 mO cm2 based up on using the same parameters as for Model A. It can be observed that the JFET resistance is smaller in Model B than for Model A due to the shorter path for current flow in the vertical direction. 4 Drift Region Resistance The resistance contributed by the drift region in the power D-MOSFET structure is enhanced well above that for the ideal drift region due to current spreading from the JFET region.
The gate voltage initially increases linearly with time. After reaching the threshold voltage, the drain current can be observed to increase in a non-linear manner 52 2 D-MOSFET Structure Gate Voltage (Volts) 10 VGP VTH Drain Current Density (A / cm2) 0 100 JON Drain Voltage (Volts) 0 25 VDS 0 0 t1 t2 1 t3 2 Time (microseconds) 3 t4 4 Fig. 25 Analytically computed waveforms for the 30-V power D-MOSFET structure because the transconductance is a function of the gate bias voltage. The drain current density increases until it reaches an on-state current density of 80 A/cm2.
It can be concluded that the gate-drain charge (QGD) is the dominant portion (90%) of the gate switching charge (QSW). Equations for the gate voltage, drain current, and drain voltage waveforms obtained by using the analytical model are provided in the textbook . The waveforms obtained for the 30-V power D-MOSFET structure with 12 mm cell pitch and ˚ using these polysilicon gate width of 8 mm with a gate oxide thickness of 500 A equations are provided in Fig. 25. 17 A/cm2 was used to turn on the device from a steady-state blocking voltage of 20 V to match the results of two dimensional numerical simulations discussed below.